5-10
2026
影响因子区间
81天
平台估算
52%
2025
中国作者发文占比
—
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期刊简介:Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.Etc...
【译文】传感器和执行器A:物理期刊汇集了多学科兴趣,专注于传播有关固态器件在转换物理信号方面的研究和发展信息的各个方面。传感器和执行器A:物理期刊定期发表原创论文、编辑信件以及偶尔邀请的综述文章,涵盖以下设备领域:• 基础和物理,例如:效应分类、物理效应、测量理论、传感器建模、测量标准、测量误差、单位和常数、时间和频率测量。建模论文应将新的建模技术引入该领域,并得到实验结果的支持。• 材料及其加工,例如:压电材料、聚合物、金属氧化物、III-V和II-VI半导体、厚膜和薄膜、光学玻璃纤维、非晶态、多晶和单晶硅。• 光电传感器,例如:光伏二极管、光电导体、光电二极管、光电晶体管、正电子敏感光电探测器、光隔离器、光电二极管阵列、电荷耦合器件、发光二极管、注入激光器和液晶显示器。• 机械传感器,例如:金属、薄膜和半导体应变片、扩散硅压力传感器、硅加速度计、固态位移传感器、压电结器件、压电场效应晶体管(PiFETs)、隧道二极管应变传感器、表面声波器件、硅微机电开关、固态流量计和电子流量控制器等。

| 指标 | 当前值 | 近三年趋势 |
|---|---|---|
| JCR分区 | Q1 | 暂无 |
| 中科院分区 | 3区 | 暂无 |
| 影响因子区间 | 5-10 | 暂无 |